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Doping level of Mn in high temperature grown Zn1−xMnxO studied through electronic charge distribution, magnetization, and local structure

Ramachandran Saravanan, Santhanam Francis, and John L. Berchmans

Research centre and PG Department of Physics, The Madura College, Madurai, 625 011 Tamil Nadu, India

 

E-mail: saragow@dataone.in

Abstract: Mn inclusion in the oxide based diluted magnetic semiconductor Zn1−x Mn x O (x = 0.04, 0.06, 0.08, and 0.10) grown by standard high temperature solid state reaction technique has been studied. The local and average structure of Zn1−x Mn x O was characterized by the super resolution technique maximum entropy method and pair distribution function analysis using the X-ray powder data. Magnetic studies on this material using a Vibrating Sample Magnetometer were also carried out to ascertain the doping level in Zn1−x Mn x O.

Full paper is available at www.springerlink.com.

DOI: 10.2478/s11696-011-0129-8

 

Chemical Papers 66 (3) 226–234 (2012)

Wednesday, July 24, 2024

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