ISSN print edition: 0366-6352 ISSN electronic edition: 1336-9075 Registr. No.: MK SR 9/7 Published monthly

Preparation of Ga³⁺:ZnO quantum dots and the photoelectric properties of sensitized polycrystalline silicon solar cells

Ling-Ling Zhou, Gang Wu, Jie Liu, and Xi-Bin Yu

Department of Food and Environmental Engineering, Chuzhou Vocational and Technical College, Chuzhou, China

E-mail: zhoulingling@chzc.edu.cn

Received: 22 February 2020  Accepted: 23 May 2020

Abstract:

The Ga³⁺:ZnO quantum dots/Si solar cells were prepared, based on the polycrystalline silicon. The photoelectric properties, including the absorption and reflection, the electrical properties, the minority carrier lifetime and the quantum efficiency, have been investigated and analyzed. The results showed that the deposed Ga³⁺:ZnO quantum dots could increase the carrier concentration and the Hall mobility, improve the life of the minority, reduce the series resistance of the photovoltaic device effectively and reduce the energy loss of the polycrystalline silicon solar cell. Thus, the photoelectric response performance parameters of the Ga³⁺:ZnO/Si solar cells were upgraded degrees and its photoelectric conversion efficiency was improved.

Keywords: Quantum dots; Doping; Resistivity; Transmission rate; Photoelectric conversion efficiency

Full paper is available at www.springerlink.com.

DOI: 10.1007/s11696-020-01339-3

Chemical Papers 75 (2) 805–811 (2021)