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Thermal Desorption Spectroscopy of Hydrogen from Amorphous Hydrogenated Silicon

O. Salyk, A. Poruba, and F. Schauer

Institute of Consumer's Chemistry, Faculty of Chemistry, Technical University, CZ-637 00 Brno


Abstract: Thermal desorption spectroscopy (TDS) based on the mass spectroscopy of thermally evolved hydrogen is used for desorption analysis of amorphous hydrogenated silicon (a-Si:FI). Two series of glow discharge chemical vapour deposited a-Si:H were investigated by the TDS method. Constant temperature growth rate enabled to determine temperature regions of hydrogen evolution and its total content in the film. These values are compared with the results of infrared (IR) absorption spectroscopy. The dependence of the H content and the position of the maximum of the evolution curve on deposition conditions, as radio frequency (RF) power used in a standard plasma enhanced chemical vapour deposition (PE CVD) glow discharge, was observed. The RF power was related to a silane how rate during the deposition. The lower temperature of the evolution peaks and simultaneously the lower H content were observed in the layers prepared under the larger relative RF power conditions (the high silane decomposition efficiency). These results correlate well with light degradation measurements in device quality samples.

Full paper in Portable Document Format: 504a177.pdf


Chemical Papers 50 (4) 177–182 (1996)

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