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A Raman spectroscopy study on differently deposited DLC layers in pulse arc system

Tibor Ižák, Marián Marton, Marián Vojs, Robert Redhammer, Marián Varga, and Marián Veselý

Department of Microelectronics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovičova 3, 812 19 Bratislava, Slovakia

 

E-mail: tibor.izak@stuba.sk

Received: 26 November 2008  Revised: 12 August 2009  Accepted: 13 August 2009

Abstract: This study is focused on Raman spectroscopy investigations of differently deposited diamond-like carbon (DLC) layers due to varying: (i) Ar and/or N2 flow rate, (ii) number of impulses, and (iii) bias voltage during the growth process. Samples were prepared by a physical vapor deposition method in a pulse arc system. It is shown that Ar and N2 flow rates as well as the bias voltage influence the morphology and chemical composition of the deposited DLC layers. By changing the number of impulses, the number of carbon atoms sputtered from target in the vacuum chamber changes, which is reflected in the thickness and morphology of the DLC layers. Visible light Raman spectroscopy of 632 nm excitation wavelength was used for deep analysis of the deposited layers.

Keywords: diamond-like carbon thin films - carbon nitride - Raman spectroscopy - pulse arc deposition

Full paper is available at www.springerlink.com.

DOI: 10.2478/s11696-009-0092-9

 

Chemical Papers 64 (1) 46–50 (2010)

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