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Identification of selective oxidation of TiC/SiC composite with X-ray diffraction and Raman spectroscopy

Nicoleta Doriana Banu, Ionut Banu, Marios S. Katsiotis, Anjana Tharalekshmy, Samuel Stephen, Jamie Whelan, Gisha Elizabeth Luckachan, Radu Vladea, and Saeed M. Alhassan

Department of Chemical Engineering, The Petroleum Institute, P.O. Box 2533, Abu Dhabi, United Arab Emirates

 

E-mail: marek.golebiowski@ug.edu.pl

Abstract: Open cell 3D titanium carbide/silicon carbide (TiC/SiC) composite was oxidised to titanium oxide/silicon carbide (TiO2/SiC) following different temperature profiles in a thermal gravimetric analysis (TGA) instrument in continuous air-flow and static air (oven) environments. The TiC oxidation to anatase, starting at temperatures over 450°C, was confirmed by Raman spectroscopy and X-Ray diffraction (XRD). By increasing the temperature, the mass fraction of anatase diminished, while the mass fraction of rutile increased. SiC oxidation started at 650°C when a mixture of TiO2/SiO2/SiC could be observed by Raman, XRD and HRTEM.

Keywords: selective oxidation – TiC/SiC composite – X-ray diffraction – Raman spectroscopy – anatase – rutile

Full paper is available at www.springerlink.com.

DOI: 10.1515/chempap-2016-0084

 

Chemical Papers 70 (11) 1503–1511 (2016)

Sunday, September 22, 2019

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